Mar 11, 2025
Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer
In ultra-precision machining, the variation of atom migration rate leads to stress concentration on the silicon wafer surface, causing subsurface damage. By coupling the Weierstrass-Mandelbrot fractal surface function method with molecular dynamics, a model of the rough surface of silicon wafers is constructed, and the subsurface damage of silicon wafers during the grinding process is analyzed.
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