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Current flows without heat loss in newly engineered fractional quantum material

A team of US researchers has unveiled a device that can conduct electricity along its fractionally charged edges without losing energy to heat. Described in Nature Physics, the work, led by Xiaodong Xu at the University of Washington, marks the first demonstration of a "dissipationless fractional Chern insulator," a long-sought state of matter with promising implications for future quantum technologies. From quantum Hall to fractional phases The quantum Hall effect emerges when electrons are confined to a two-dimensional material, cooled to extremely low temperatures, and exposed to strong magnetic fields. Much like the classical Hall effect, it describes how a voltage develops across a material perpendicular to the direction of current flow. In this case, however, that voltage increases in discrete, or quantized steps.

Hall effect ion thruster looking very photogenic

#ion thruster #Hall effect #blue #glow

Unusual nonlinear thermoelectric effect appears in chiral tellurium, confirming theoretical predictions

An unusual thermoelectric effect has been observed in the semiconductor tellurium by RIKEN physicists for the first time. This demonstration points to the potential of similar materials to be used in applications such as energy harvesting and advanced heat management. Thermoelectric materials can convert electricity into heat and vice versa. For most of them, doubling the voltage across them will double the heat they produce. But for some special thermoelectric materials, there is a nonlinear relationship between voltage and heat. Such nonlinear thermoelectric materials are useful for applications that require heat to flow in one direction and for generating electricity from thermal fluctuations. Some theoretical calculations have predicted that even more exotic nonlinear thermoelectric effects will occur in materials where the atoms or molecules have a chiral arrangement. But they hadn't been observed in the lab—until now.

Quantum effect could power the next generation of battery-free devices

A new study has revealed how tiny imperfections and vibrations inside a promising quantum material could be used to control an unusual quantum effect, opening new possibilities for smaller, faster, and more efficient energy-harvesting devices. The international team, led by Professor Dongchen Qi from the QUT School of Chemistry and Physics and Professor Xiao Renshaw Wang from Nanyang Technological University in Singapore, studied the mechanism governing the so-called nonlinear Hall effect (NLHE). The research is published in the journal Newton. Unlike the classical Hall effect, this quantum version allows alternating electrical signals, like those found in wireless or ambient energy sources, to be converted directly into usable direct current without the need for traditional diodes or bulky components.

Roadmap charts three paths to room-temperature quantum materials for cooler computing

Imagine a laptop that never gets hot, a phone that holds its charge for days, or a computer memory chip designed to permanently retain data, even when the power goes out. This is the possibility sitting inside a remarkable family of materials that a team of researchers from the University of Ottawa and the Massachusetts Institute of Technology (MIT) has spent years trying to understand, and they just published a comprehensive roadmap of the field to date in the journal Newton. How magnetism and topology intertwine Magnetic topological materials sit at the crossroads of magnetism and topology in modern physics. Topology is the mathematical study of shapes that cannot be continuously deformed into one another. In these materials, that idea protects the flow of electrons in a way that normal materials simply cannot.

New magnetic sensor material discovered using high-throughput experimental method

A NIMS research team has developed a new experimental method capable of rapidly evaluating numerous material compositions by measuring anomalous Hall resistivity 30 times faster than conventional methods. By analyzing the vast amount of data obtained using machine learning and experimentally validating the predictions, the team succeeded in developing a new magnetic sensor material capable of detecting magnetism with much higher sensitivity. This research was published in npj Computational Materials on September 3, 2025. The anomalous Hall effect is a phenomenon in which a voltage is generated in a magnetic material when an electric current flows through it, appearing in the direction perpendicular to both the current and the material's magnetization (that is, from the north to the south magnetic pole). By leveraging this property, changes in magnetization can be sensitively detected as electrical signals, making the effect promising for applications such as read heads in next-generation hard disk drives and high-performance magnetic sensors.

Detecting 'hidden defects' that degrade semiconductor performance with 1,000X higher sensitivity

Semiconductors are used in devices such as memory chips and solar cells, and within them may exist invisible defects that interfere with electrical flow. A joint research team has developed a new analysis method that can detect these "hidden defects" (electronic traps) with approximately 1,000 times higher sensitivity than existing techniques. The technology is expected to improve semiconductor performance and lifetime, while significantly reducing development time and costs by enabling precise identification of defect sources.

Topological insulator maintains quantum spin Hall effect at higher temperatures

Topological insulators could form the basis for revolutionary electronic components. However, as they generally only function at very low temperatures, their practical application has been severely limited to date. Researchers at the University of Würzburg have now developed a topological insulator that also works at higher temperatures. Their results are published in Science Advances. A topological insulator can be imagined as a material that is a perfect insulator on the inside—it does not conduct electricity there. At its edges, however, it behaves like an almost lossless "electron highway." Electrons can move along these paths with almost no loss. To deepen the analogy: these highways have separate lanes for electrons with different "spins"—a kind of intrinsic angular momentum. Electrons with "spin-up" move in one direction, electrons with "spin-down" in the opposite direction. This strict traffic regulation prevents collisions and thus energy losses. The phenomenon behind this is known as the quantum spin Hall effect (QSHE)—an effect that was also first experimentally proven at the University of Würzburg.

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