First section of high capacity, surface mounted, one chip NV SRAM module that the American letters introduces industry
American letter Constituent companies wholly-owned Dallas Semiconductor,introduce industry first high capacity, one chip, is surface mounted non-volatile SRAM module: DS2070W +100 (2M * 8) * 8 persons of and DS3070W +100 (2M, integrated RTC) ,Built-in can stand the battery of solder-reflow.
Different from other NV SRAM module at present on the market, DS2070W/DS3070W NV SRAM module is extremely simple. Serial device this adopt the intersection of one chip and scheme, can stand battery of solder-reflow while being built-in. Can adopt standard assemble the intersection of procedure and very simple the intersection of realization and serial installation of device this: Can through pickings Off-The-Shelf /last player if you can't pick up and stick to from tape coiling equipped with device, device will put. There are getting more compatible at SMT crafts canonial on devices serial,it can last +225 ¡Ã¦(+0 of 30 seconds longest /- 5 ¡æ) Crest value solder-reflow temperature. After finishing solder-reflow, this module can adopt water to wash the procedure, does not need any additional measure.
Act as it compared with the rival's traditional two-piece surface mounted scheme, the DS2070/DS3070 one but the solder-reflow battery is more apparent, his importance. The two-piece surface mounted scheme needs to increase and assemble process and cost extraly: Installation need especially carefully at the battery, because disposable battery that present industry use can't adopt solder-reflow. So adopt the intersection of solder-reflow and craft base (without battery) first usually On the circuit board welded, then is assembling the final stage of the process and just mounting the battery onto the base by hand. DS2070W/DS3070W removes these from assembling the process, has shortened production cycle and lowered costs.
DS2070W/DS3070W is a highly Integrated module, it is convenient to use, the device utilizes intelligent circuit to control VCC continuously, prevent the unexpected power down from causing and losing importantly and machine format. When VCC receives on the module, the external source, to the battery charge of internal lithium-manganese, it is SRAM that supplies power at the same time, allow users to revise the content of SRAM. When the mains voltage goes beyond the tolerance, device self-turn-on battery, and start write protect unconditionally, in order to prevent the data from being lost. The device can carry out the write operation many times, do not need any by-product circuit when with the microprocessor interface.
DS2070W/DS3070W one chip NV SRAM module is the whole static memory, structure and similar to company's Off-The-Shelf one chip NV SRAM module at present functionally. Serial module this can substitute SRAM, EEPROM, flashing memory, in the range of * 8 of 32k between * 8 of 2M capacity of device these. The device of different capacity has identical capsulation forms and pins that is arranged, help users expand the memory capacity in a situation that the body is designed not to change.
DS2070W/DS3070W adopts RoHS compatibility, 27mm * 27mm, 256 welded balls BGA to capsulate, realizes with the external environment that totally isolates. It if you can't stipulate this devices serial, work until - 40 ¡æ to +85 ¡æ technical grade temperature range. The trigger price of DS2070W +100 is $38.41, and the trigger price of DS3070W +100 is $42.25 (1000 sheets arise, American F.O.B.) .