Comparable to Plass and put out 2Mbit and 8Mbit nvSRAM
A few days ago, comparable to Plass semi-conductive company and claimed to introduce 2 Mbit and 8 Mbit non-volatile static random access memory (nvSRAM) ,Have further enriched its nvSRAM product series from 16 Kbit to 8 Mbit of the company. The access time of this new product is short to 20 nanoseconds, ones that supported many times were read and written and circulating with the call, and data can keep long twenty-year. NvSRAM has offered the best solution for needing high literary sketch continuously and entering the application of data and absolutely non-volatile data security, so the ideal choice in industrial control, car, medical treatment and data communication,etc. field become under server, RAID application, severe environment.
CY14B102 2 Mbit nvSRAM and CY14B108 8 Mbit nvSRAM accords with ROHS order, can replace SRAM, battery-driven SRAM, EPROM and EEPROM device directly, does not need to guarantee reliable non-volatile data storage with installation battery. At the deenergization, data can transmit to the intersection of nvSRAM and non-volatile memory cell of device from SRAM automatically. When being energization, the data can be returned from the nonvolatile memory to SRAM. Two kinds of above-mentioned operation can be realized through software control. New nvSRAM adopts S8&trade comparable to Plass; 0.13 One micron of silicon silicon oxynitride oxides (SONOS) The embedded nonvolatile memory craft was made, had more high density, shorter access time and high and outstanding characteristic.
NvSRAM of 2 Mbit and 8 Mbit supports the characteristic of the real time clock, can realize the lowest awaiting the opportune moment in the electric current of the Shaker of industry, can guarantee high performance the most of the integrated memorizer, thus can realize the time stamp function of the incident supported by nonvolatile memory.
NvSRAM is the optimal nonvolatile memory solution at a high speed of the industry, as to battery-driven SRAM, its board-level space is less, design complexity to be lower, and than magnetic random packing device (MRAM) Or ferroelectric memory (FRAM) More economic and more reliable. NvSRAM of 2 Mbit and 8 Mbit is comparable to the newest members in Plass nvSRAM product series, this series its realize other products of batch productino include 16 Kbit, 64 Kbit, 256 Kbit, 1 Mbit, device of 4 Mbit also already at present.
As the technical leading company of SONOS craft, are comparable to Plass one generation of new PSoC® Composite signal array, OvationONS™ Adopt S8 technology in laser navigation sensor, programmable clock and other products. SONOS and standard to have high serviceability, low power consumption, radioprotective the intersection of person who strengthen and numerous advantages. In addition, SONOS is as to technology of other embedded nonvolatile memories, also it is made that one section is saner, easier, more low-cost solution.
NvSRAM of stock situation match Plass' 2 Mbit and 8 Mbit has already offered samples at present, it is estimated that will begin to go into operation in the third quarter of 2008. The above-mentioned products can adopt 48 TSOPII which guide foot FBGA capsulating and 44 pins and 54 pins to capsulate. This kind of getting non-volatile SRAM according to comparable to the intersection of Plass and Company before the this west nurse's Tyke company (Simtek Corporation) But the second batch of products in the device series of common development of cooperation product development agreement signed.