MXene-GaN van der Waals metal-semiconductor junctions for high performance photodetection
High levels of dark current and noise have ailed metal-semiconductor-metal (MSM) photodetectors for years. Recently, scientists in China demonstrated that by replacing conventional metals with MXene, the dark current and noise of MSM multiple quantum well photodetectors can be significantly improved.
The proliferation of the Internet of Things (IoT) has sparked intense interest of photodetectors (PD) as they are widely used in sensing, detection, data transport and processing. The coming 5G-enabled IoT (5G-IoT) will require new performance criteria such as massive connectivity, ultra-low latency and ultra-reliability for huge number of IoT devices. To meet these demands, metal-semiconductor-metal (MSM) photodetectors have received much attention for their high response speed, simple fabrication process and feasibility of integration with field effect transistor (FET) technology.
However, the conventional fabrication process will induce chemical disorder and defect states at the metal-semiconductor interfaces, leading to significant dark current and noise. Additionally, opaque metals are usually placed on top of the active light absorption region, which will reflect part of the incident light and thus reduce the responsivity of MSM photodetectors.
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