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ROHM's 4th Generation SiC MOSFETs Tech Explainer
https://www.futureelectronics.com/m/rohm. ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. https://youtu.be/mNhRw_FvRPo
ROHM's 4th Generation SiC MOSFETs Tech Explainer
https://www.futureelectronics.com/m/rohm. ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. https://youtu.be/mNhRw_FvRPo
