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📢 Onsemi SiC MOSFETs offer high efficiency, small size, and low cost, outperforming silicon MOSFETs in blocking voltage, thermal conductivity, and on-state resistance. Parameters include blocking voltage of 650-1700V, max current of 4.2-163A, on-state resistance of 12-960mΩ, output capacitance of 11-430pF, and total gate charge of 14-329nC.
#Onsemi #SiC #MOSFETs
Clean Energy Shift Sparks Massive Growth in Silicon Carbide MOSFETs Market
Silicon carbide (SiC) MOSFETs are revolutionizing power semiconductor applications with their superior efficiency, high-temperature tolerance, and compact design advantages over traditional silicon MOSFETs. SiC MOSFETs enable higher voltage capabilities, reduced switching losses, and smaller form factors—making them highly suitable for electric vehicles (EVs), renewable energy systems, and industrial applications.
As global energy infrastructure undergoes rapid electrification and decarbonization, SiC MOSFETs are becoming integral to this transformation, facilitating higher power density, better efficiency, and system miniaturization across sectors.
Market Drivers & Trends
The key factors fueling the growth of the silicon carbide MOSFETs market include:
Accelerated adoption of electric vehicles: EVs increasingly use SiC MOSFETs in on-board chargers (OBCs), inverters, and battery management systems to optimize energy efficiency and performance.
Rapid deployment of renewable energy systems: The demand for solar PV inverters and energy storage systems that utilize SiC MOSFETs continues to surge.
Increased focus on energy efficiency: SiC MOSFETs' ability to handle high frequencies and temperatures supports the miniaturization and optimization of power electronic systems.
Cost reduction due to scale and innovation: As production volumes rise and competition intensifies, the costs of SiC devices have declined significantly, further driving adoption.
Latest Market Trends
Recent market trends emphasize the growing importance of WBG semiconductors, particularly in the EV and power grid sectors:
Widespread use of 1200 V – 1700 V breakdown voltage SiC MOSFETs: These are gaining momentum for applications in solar PV, HVAC systems, motor drives, and charging infrastructure.
High-performance traction inverters: Automakers are adopting SiC-based inverters to extend driving range and improve energy efficiency.
Solar and energy storage integrations: Utility-scale installations are increasingly relying on SiC MOSFETs to enhance inverter efficiency and reduce system size.
Access important conclusions and data points from our Report in this sample – https://www.transparencymarketresearch.com/sample/sample.php?flag=S&rep_id=81899
Key Players and Industry Leaders
The market is characterized by innovation-driven competition. Key players include:
STMicroelectronics N.V.
WOLFSPEED, INC.
Infineon Technologies AG
ROHM CO., LTD.
Toshiba Electronic Devices & Storage Corporation
Microchip Technology Inc.
Diodes Incorporated
Littelfuse, Inc.
SemiQ, Inc.
Sansha Electric Manufacturing Co., Ltd.
These companies are heavily investing in R&D, launching new product lines, and expanding their global footprint through strategic collaborations and acquisitions.
Recent Developments
September 2022: SemiQ launched a 1200V 40mΩ second-generation SiC MOSFET offering better switching efficiency for broad applications.
August 2022: Toshiba introduced its TWxxNxxxC SiC MOSFET series, with 650V and 1200V variants, targeting EVs, industrial equipment, and renewable energy solutions.
Wolfspeed and STMicroelectronics have announced expansion of their SiC production capacity to meet the rising global demand.
Market Opportunities
The expanding demand for efficient power electronics across sectors opens new avenues:
EV Infrastructure: Growing installation of EV fast-charging stations is boosting SiC MOSFET demand for high-power and reliable converters.
Data Centers: Increased use of SiC MOSFETs in UPS systems and server PSUs to reduce energy consumption and thermal footprint.
Industrial Automation: SiC MOSFETs are being adopted in motor drives and factory equipment for better operational control and efficiency.
Energy Storage: Integration of SiC in battery management and grid-level storage systems to enhance scalability and response time.
Future Outlook
The silicon carbide MOSFETs market is set to experience exponential growth over the next decade. Analysts expect advancements in 8-inch SiC wafer production and vertical integration strategies to bring further cost efficiencies. Increased collaboration between automotive OEMs and SiC component manufacturers is likely to catalyze mass adoption across electric mobility platforms.
By 2031, widespread electrification, renewable energy commitments, and stringent energy efficiency standards will solidify SiC MOSFETs' position as a cornerstone technology in global power electronics.
Market Segmentation
By Breakdown Voltage:
650 V – 900 V
900 V – 1200 V
1200 V – 1700 V (Largest segment)
Above 1700 V
By Application:
Inverters (Highest CAGR – 30.4%)
On Board Chargers (OBC)
Uninterruptible Power Supply (UPS)
Motor Drives
Energy Storage Systems
Others (Server, Switch Mode Power Supply)
By End-use Industry:
Automotive
Energy & Power
Industrial
Consumer Electronics
Others (Telecommunication, Healthcare)
Regional Insights
Asia Pacific held the largest market share in 2022 at 33.2%, led by China, India, Japan, and South Korea. Government incentives, booming EV sales, and rapid solar PV deployment are key growth factors.
North America emerged as the second-largest market, with strong contributions from the U.S. Renewable energy incentives, EV policy support, and increasing solar energy adoption are spurring demand.
Europe is also seeing significant adoption due to climate goals, automotive electrification, and innovation-led demand in industrial sectors.
Why Buy This Report?
In-depth Industry Analysis: Detailed segmentation by voltage, application, end-use, and geography.
Forecasts up to 2031: Market size, volume, and growth projections.
Competitive Intelligence: Profiles of leading players with insights into strategy and innovation.
Technology Trends: Analysis of emerging technologies, product developments, and market disruptors.
Regional Forecasts: Insights into major regional markets and country-level growth drivers.
This report serves as a comprehensive tool for decision-makers, investors, and businesses to understand market dynamics, identify opportunities, and stay ahead in the rapidly evolving SiC MOSFET landscape.
ROHM's 4th Generation SiC MOSFETs Tech Explainer
https://www.futureelectronics.com/m/rohm. ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. https://youtu.be/mNhRw_FvRPo
ROHM's 4th Generation SiC MOSFETs Tech Explainer
https://www.futureelectronics.com/m/rohm. ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. https://youtu.be/mNhRw_FvRPo
Millennium Semiconductors India is an authorized distributor of Silicon Carbide (SiC) MOSFETs from the world's leading SiC MOSFETs manufacturers and suppliers. Contact Us.
Top 5 Benefits of SiC MOSFETs
Silicon Carbide (SiC) MOSFETs have emerged as a game-changing technology in power electronics, with many advantages over traditional MOSFETs.
Here are the Top 5 benefits of SiC MOSFETs:
High Efficiency: SiC MOSFETs have low switching and conduction losses, resulting in higher efficiency and lower power dissipation.
Fast Switching Speed: SiC MOSFETs have fast switching speeds, enabling them to switch on and off more quickly than traditional MOSFETs, which results in reduced switching losses and higher power density.
High-Temperature Performance: SiC MOSFETs can operate at higher temperatures than traditional MOSFETs, which makes them ideal for high-temperature applications.
Reduced System Size and Weight: The high efficiency and fast switching speed of SiC MOSFETs enable the design of smaller and lighter power systems, making them ideal for space-constrained applications.
Improved Reliability: SiC MOSFETs have a higher breakdown voltage than traditional MOSFETs, making them more reliable in high-voltage applications.
At Millennium Semiconductors, we are committed to providing our customers with the highest quality SiC MOSFETs on the market. With our extensive experience in the industry and our commitment to excellence, you can trust us to deliver the best SiC MOSFETs for your applications.
Contact us today to learn more about our products and services.
Conquer High Switching Losses with Microchip Silicon Carbide MOSFETs Trounce IGBTs
https://www.futureelectronics.com/resources/featured-products/microchip-silicon-carbide-power-solutions. When compared to silicon IGBTs, SiC MOSFETs can reduce switching losses by over 70 percent. Learn more about Microchip’s broad portfolio of SiCdevices, including MOSFETs, diodes, gate drivers and our new, industry-leading, 3.3 kV SiC MOSFET. https://youtu.be/h_TVG3sNe4k
Conquer High Switching Losses with Microchip Silicon Carbide MOSFETs Trounce IGBTs
https://www.futureelectronics.com/resources/featured-products/microchip-silicon-carbide-power-solutions. When compared to silicon IGBTs, SiC MOSFETs can reduce switching losses by over 70 percent. Learn more about Microchip’s broad portfolio of SiCdevices, including MOSFETs, diodes, gate drivers and our new, industry-leading, 3.3 kV SiC MOSFET. https://youtu.be/h_TVG3sNe4k
