#trenchfet

[timestechnow]

Vishay Unveils 30 V N-channel TrenchFET Gen V Power MOSFET | TimesTech

MALVERN, Pa. — Vishay Intertechnology has introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 V, […]

[kogter-blog]

Vishay puts out the new 20V P passway TrenchFET power MOSFET

Vishay has been introduced to aim at meeting to 20V p passway TrenchFET of demand of a smaller component in the porable equipment? Power MOSFET, this device adopts MICRO FOOT chip level packaging, has the industry thinnest thickness and lowest on resistance in this kind of devices.

Vishay Siliconix Si8441DB has the ultrathin thickness of 0.59mm, and the area of position occupied of 1.5mm * 1mm, this is offered first this kind of devices of the on resistance in 1.2V nominal voltage. The typical application of this device includes load switch and battery in porable equipments such as mobile phone, PDA, digital camera, MP3 player and smart phone,etc. are protected.

0.600 when Si8441DB has offered 1.2V VGS; 0.080 when to 4.5V VGS; On resistance range,last bar source voltage that is highest ± 5V. The outstanding performance degradation of low on resistance moves the demand of the circuit to level when it is in 1.2V nominal voltage, thus has saved the space in the walkie electronic design.

Has Vishay also put out and adopted the same MICRO FOOT at the same time? Another encapsulated new style MOSFET power device of the chip level --- 20V p passway Si8451DB. The highest specified bar source power of Si8451DB is 8V, 0.80Ω when the range of its on resistance lies between from 0.200Ω to 4.5V on 1.5V, this is optimum value that the device with the nominal voltage realizes up until now.

Constant increase of smaller and smaller with the volume of the portable electronics and their function, the available face space of the circuit of power management will be reduced greatly. In order to realize consumers to the expectation of run time of battery among the interval of battery charge, designer need light MOSFET to have low power consumption seal, load with and this Si8441DB and characteristic that Si8451DB has of Vishay exactly.

At present, two sections of above-mentioned new MICRO FOOT? Sample and batch productino batch of the power MOSFET of chip level packaging can already be offered, the lead time of the large order is 10- 12 weeks.