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Electronic transistor distributors provide high-quality semiconductor components essential for amplifying and switching electronic signals in modern devices. Transistors are fundamental to integrated circuits and systems, enabling efficient performance, reliability, and innovation across industries such as automotive, telecommunications, and industrial electronics.

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Practical design guidelines for atom-thin oxide transistors enable reliable 3D chip integration

Researchers at National Taiwan University have developed a unified model that explains how thickness, defects, interface quality, and roughness together control the behavior of ultrathin oxide transistors. The work, published in Small Structures, provides practical design rules for building low-leakage, normally-off devices suitable for future 3D chip stacking. Better models are needed for better ultrathin transistors As the semiconductor industry pushes toward three-dimensional chip stacking, engineers need transistors that can be built on top of existing circuits without damaging the layers below. That means the devices must be manufactured at relatively low temperatures, stay extremely thin, consume very little power, and still switch reliably.

Key transistor for next-generation 3D stacked semiconductors operates without current leakage

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors" that operate stably without current leakage even in two-dimensional nanoscale channel structures. A study on this work is published in the journal Advanced Science. In recent years, the semiconductor industry has faced physical limitations as the demand to integrate more devices within limited space continues to grow. To overcome these constraints, "vertically stacked transistors," in which current-carrying channels are vertically layered, have emerged as a promising alternative for next-generation 3D semiconductors. However, conventional vertically stacked transistors suffer from a critical drawback in which gate electric signals are not delivered uniformly into the channel interior due to their electrode structure, consequently leading to current leakage or unstable device operation as the channel length becomes shorter.

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