New Wafer-Level Super SSDs Could Entirely Supplant HDDs
The future of storage by Harddiskdirect.com
Technology keeps superseding itself with faster and more desirable results and cheaper rates. Wafer-level solid-state devices (SSDs) offer huge capacity and performance while simultaneously saving money. These modern SSD have been designed to meet the needs of hyperscale data centers for increased storage density.
Kioxia, a Japanese company, believes that these vinyl-like SSDs are the desired solid-state storage solution. The company suggests using an entire wafer with 3D NAND instead of dicing, assembling, chip packaging, and SSD drive assembly.
The wafer will be probed with Kioxia's "super multi-probing technology" to find and disable any problematic 3D NAND dies before being mounted to a pad with I/O and power connectors. To have the best sequential and random IOPS performance, everything should be run in parallel.
Form factors and chip packing technologies now limit SSD capacity, whereas controllers (i.e., the number of NAND channels and their ability to successfully conduct ECC and other essential operations efficiently) and the PCI Express interface dictate performance constraints.
On a wafer level, a large number of NAND channels (far beyond Microsemi's 32 channels, which are popular on enterprise-grade SSDs) can be obtained, while a PCIe 6.0 x16 interface can transmit up to 128 GB/s of bandwidth. In terms of IOPS, we're talking about multi-channel gigantic SSDs, so expect millions.
In a presentation at VLSI Symposium 2020, Kioxia's chief engineer, Shigeo Oshima, outlined the concept of wafer-level storage devices, indicating that this is not now on the company's roadmap, but might be soon.
Kioxia, on the other hand, presently manufactures 1.33 Tb 96-layer 3D QLC NAND chips with a surface area of 158.4 mm2 and write speeds of up to 132 MB/s thanks to a quad-plane architecture. Because 355 of these dies fit on a 300-mm wafer, Toshiba receives around 320 good dies, or 53 TB of raw 3D QLC NAND, assuming a yield rate of around 90%. Toshiba will have more raw 3D NAND per wafer with future versions.
A solid-state storage solution built on 300-mm 3D NAND wafer(s) would resemble a normal rack server, complete with its own logic, power supply, cooling system, and other network interfaces. Such a server will not be a champion in terms of storage density (not in a world when 100 TB can be packed into a 3.5-inch form-factor), but if you need exceptional performance at a low price, such a device could make sense.















