Jun 9
ROHM launches TSC3PAK package for SiC MOSFETs enhancing heat dissipation and reliability
June 9, 2026 /SemiMedia/ — ROHM has introduced the TSC3PAK package (14.00 × 18.58 × 3.50 mm) for silicon carbide (SiC) MOSFETs, featuring a top-side heat dissipation structure that supports automated mounting while delivering heat dissipation comparable to conventional through-hole packages such as TO-247-4L. The package is aimed at enhancing efficiency and reliability in power conversion…