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New conductive-bridge interlayer contacts could boost performance of 2D optoelectronics

Photodiodes are widely used devices based on semiconducting materials that can convert light into electrical current. These devices are central components of various contemporary technologies, including photovoltaics (PVs) and some sensing, imaging, measurement and communication systems. In recent years, engineers have been trying to devise new design strategies that could further improve the performance of photodiodes and the efficiency with which they convert light into electricity. One proposed approach entails their fabrication using two-dimensional (2D) semiconductors, which are only a few atomic layers thin and exhibit advantageous properties. Despite their potential, many 2D semiconductor-based photodiodes fabricated so far have not performed as well as expected. This is in great part due to a phenomenon known as Fermi level pinning, which entails a fixation of the energy level at the interface between a metal and semiconductor.

Building better infrared sensors: Novel photodiode design boosts responsivity

Detecting infrared light is critical in an enormous range of technologies, from remote controls to autofocus systems to self-driving cars and virtual reality headsets. That means there would be major benefits from improving the efficiency of infrared sensors, such as photodiodes. Researchers at Aalto University have developed a new type of infrared photodiode that is 35% more responsive at 1.55 µm, the key wavelength for telecommunications, compared to other germanium-based components. Importantly, this new device can be manufactured using current production techniques, making it highly practical for adoption. "It took us eight years from the idea to proof-of-concept," says Hele Savin, a professor at Aalto University.

Infrared avalanche photodiodes from bulk to 2D materials

The avalanche multiplication effect can be used to detect low-power optical signals and even single photons due to the amplification mechanism within all main ranges: near- (NIR), short- (SWIR), mid- (MWIR) and long wavelength infrared radiation (LWIR). An advanced laser radar and weapons systems implemented in long-range army and space applications must detect, recognize and track various targets under a diversity of atmospheric conditions including absorption by CO, CO2 and H2O vapor, which leads to significant signal attenuation in the optical system. That output signal suppression requires an extra amplifier along with a system to correctly detect the signal at the detector stage. The devices based on avalanche photodiodes (APDs) exhibiting high bandwidth (BW) and gain (M) to high gain-bandwidth product (GBW) and low excess noise [F(M)] at the same time are well matched for the detection of suppressed optical signals, e.g., in the long-range applications such as free-space optical communications (FSO), night vision, light detection and ranging (LIDAR/LADAR), time of flight (ToF), intelligent robotics and finally in battlefield conditions (military applications).

OPD optical sensors that reproduce any color

Photodiodes are optical sensors that convert the energy of light into electrical energy. Organic photodiodes (OPDs) respond quickly and have the advantage of being able to realize colors free from color filters because they can control the spectral response of wavelengths. However, most of the color controlling methods reported so far do not fit the current trends of small, thin screens because they thicken the photodiodes to cause light distortion. To meet such demands, a POSTECH research team has succeeded in producing thin-film organic photodiodes with accurate and simple junction engineering.

A research team led by Professor Dae Sung Chung and Ph.D. candidate Mingyun Kang of POSTECH's Department of Chemical Engineering has demonstrated an accurate and convenient junction engineering of organic photodiodes (OPDs) via chemical doping. The research findings were recently published in Materials Horizons, an international journal published by the Royal Society of Chemistry (RSC).

Photodiodes are the result of adding a photo-detection function to the PN junction of a semiconductor, and when light is incident to the diode, it creates an exciton and dissociates into an electron and a hole, which conducts electricity. The current increases as the light becomes stronger.

Large-area flexible organic photodiodes can compete with silicon devices

The performance of flexible large-area organic photodiodes has advanced to the point that they can now offer advantages over conventional silicon photodiode technology, particularly for applications such as biomedical imaging and biometric monitoring that require detecting low levels of light across large areas.

The low-noise, solution-processed, flexible organic devices offer the ability to use arbitrarily shaped, large-area photodiodes to replace complex arrays that would be required with conventional silicon photodiodes, which can be expensive to scale up for large-area applications. The organic devices provide performance comparable to that of rigid silicon photodiodes in the visible light spectrum—except in response time.

"What we have achieved is the first demonstration that these devices, produced from solution at low temperatures, can detect as little as a few hundred thousand photons of visible light every second, similar to the magnitude of light reaching our eye from a single star in a dark sky," said Canek Fuentes-Hernandez, principal research scientist in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. "The ability to coat these materials onto large-area substrates with arbitrary shapes means that flexible organic photodiodes now offer some clear advantages over state-of-the-art silicon photodiodes in applications requiring response times in the range of tens of microseconds."

Optoelectronics

Introduction Optoelectronics, a sub-field of photonics, blends the fascinating realms of optics and electronics. It concerns devices that operate on the interaction of light and electrical signals. The Heart of Optoelectronics: The Photon The quintessential particle of light, the photon, is the main player in optoelectronics. Understanding how photons interact with materials forms the…

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The low-capacitance InGaAs PIN Photodiodes provide high quantum efficiency from 800 nm to 1700 nm and feature a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, while maintaining the legacy high shunt resistance, low dark currents and high sensitivity, better than 1% non-linearity, and uniformity within 2% across the detector active area.

For more information, visit: https://components101.com/news/enhanced-low-capacitance-ingaas-pin-photodiodes-for-optical-power-meter-and-laser-spot-tracking-applicationsenhanced-low-capacitance-ingaas-pin

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