Focused Ion Beam Microscope (FEI 800x) at SCIF, UC Merced: SOP
Focused ion beam microscope at SCIF • Sample needs to be conductive • Copper tape or Carbon conductive tape can be used • Silver solution should be used only if it is absolutely necessary as it can mess up the parts in the system • Sample holder (Load lock) • Ion column: 30KV; Gallium ion source; Negative extraction voltage (EV) to suck Ga+2 down through the column • Black knobs around the Ion column are to align the source. Do not touch them unless changing the source. • Automatic variable aperture (AVA) • High current is for rapid milling • Low current is mostly for imaging • Javelin system: Optical microscope; Good for rough navigation • IGP – Ion getter pump • Pre-amplifier for detector • Raster for the beam controller • GIS: Gas injection system; pneumatically controlled chamber; A crucible in the chamber contains Platinum. It defines a pattern. • Common metals: Pt, W, Mo, C • Thickness of deposition: 20μ • Milling: The least is about a few nanometers but not too deep • Deposition: Usually good to have primary ions and not have secondary electrons as they can widen the deposition area • Ion beam can be used to clean up most of the overspray; Overspray can be milled away as it is usually pretty thin • Sample holder: (*200 mm wafer (8in_notch): Default setting • Check the box which says “move stage to default eucentric height” Key: Start up page ; Swiss knife: Work page: Stage position can be saved • Eucentric Height: ‘Z’ height in the chamber. When you tilt the holder, the sample we are looking at is directly under the ion beam • Touch alarm goes off if the wafer is too close to the source • Ion column: Source (Just 2.2kb to start off the Ga source. Emission current coming off the source is 2.3μA) • Extractor: Negative extraction voltage • Suppressor: Positive voltage to push the ions down • Extractor current: Usually not to be changed as it changes other settings. So, if the source doesn’t start up play adjust the suppressor voltage only • Over 14μ: *** : These three asterisk mean that the system is ready • Leave and maintain preset option checked • At the end of the day: Turn the source off and shut the high tension button off • High voltage: 30KV • Click column isolation valve • Ion source lifetime: μA-hr (units); Usually lasts for 3000μA as we use 2.2μA as a standard preset. • Beam menu: Has the aperture settings/ options • ON option Turns on heat to the Pt • Chip/ Dye that the FAB, works on is called a dead chip/ dye as they kill it just so that there is no Ga contamination • Joystick icon: For imaging • If the image is not to be seen, change the aperture • 70-350 pA is usually good enough for a good image. Generally 150pA for our system • MUI: Manual user interface • Turbo button on the joystick is for faster movement of the stage • Eucentric height can be set using a tilt test • F5: To toggle between Quad mode and single screen mode • Magnification is related to the visualization window size • We have to be aware of the fact that there is a constant damage being done to the sample on the FIB • Eucentric height: 5000 quad or 10,000 single mag is ideal • Image: 5-7nm; 10-20nm: More realistic and we have to be at 1pA for this. • Eucentric height set-up: Select a point Tilt stage: and make sure that you are looking at the same point Use only ‘Z’ to move it up or down when you are at tilted position. Do not use ‘X’ or ‘Y’ Move it very slowly to have the sample closer Once the above step is done-- move to another position (eg: 5° tilt) Total- 45° tolt Do another test as a sanity check Select a point- go all the way to 45° • To get a good picture: Scan Continuous scan: DO NOT CHANGE ANY OF THE SETTINGS Single scan: Use high resolution Better signal to noise: If it takes a long time to scan then there is always a risk of burning the sample Align ‘X and ‘Y’ under stage menu to get a straight vertical line if you plan on milling a straight line Stop scanning whenever you can We have various option to select milling patterns on the sample Arrow key is to be selected when moving around a pattern Smallest size pattern is usually the general rule whatever the pattern • For Pt deposition: Select the right beam current. Too much current mills away the sample. Too little current will take a long time and is not good for the sample • Ideally: 2-6pA/μ2 • Ideal depth of milling is about 0.5μm • X; Y; 30/4 is a reasonable size to mill • Realistically 10nm nanostructures can be imaged • Multiple patterns and different sizes can be deposited at the same time but this can be tricky. Beam is split in this case • Serial or Parallel deposition can be done • Serial: Finishes one pattern completely before moving on to the next pattern • Parallel: One pace at a time at each pattern Work page: • Material files: Dwell time: Time the beam spends at each point Overlap Normally, dwell time and overlap need not be changed and are usually determined by the material file selected General milling: Si_mtr Deposition: Pt_mtr These settings are optimized and we do not have to change the settings Yellow box (Milling pattern) : Silicon Green box (Deposition pattern) : Platinum • Before selecting the IN button just do a sanity check if the eucentric height is good • Slight shift is normal after inserting the needle • After inserting the needle, grab an image and re-center the pattern • One eye beam frame. Stops deposition and grabs an image • Auto FIN: Automated. Stage movement can be automated for deposition, milling. • Pt- Bulk cleaning • If there is topography on the top surface and Pt is not deposited then you see what is alled curtains/ waterfalls • If it is a deep channel then Pt deposition wouldn’t be necessary • After deposition hit the GIS out • Filled box; Empty box: Just a pattern box; Thick lines: Milling tool; Thin lines: Clean up tool • There is no correct beam current that is pre-determined. It depends on the sample • ‘Y’ dimension needs to be about the same as the ‘Z’ • Small box with the green screen is a real time monitor • Decent polish of a cross section can be obtained at 1000-27000pA. Ideally 350pA can be used for most cross sections • Usually depends on the cross sections • Wear the edges while cleaning up • Usually if the edges are rounded charging might occur • Cleaning • Once done- delete patter- decrease beam current- tilt • Fore shortened: ‘Y’ as it is tilted. So, the depth has to be calculated/ determined using a different formula when tilted. • During break: Back to 0° (till). HV off. • Auto FIB • Program- Auto FIB-- Run script; 7nm: Smallest diameter • Auto FIB: Very good for repetitive Nano patterning • HFW: Horizontal field width- 1.26nmm, 30mm, 800mm • Bitmap program: Milling file • For extended time based application • It is good to set the eucentric height and let it sit for an hour or two avoiding any stage movements. This allows for the stabilization and helps stay stable for longer periods of milling Detection • Detector: Needs to be in CDM ion mode= lot less 2° ions • In 2° ion mode the contrast is not high but a lot of surface (topography) features can be determined. It is also very helpful to determine contrast of metals and other conducting metals. • FEI Annotate: Reads the Tiff file. So, it reads the tilt and gives accurate measurements • Right click on the object- Object properties- Check section and measure (This program can be put on a laptop) • PSC files when saving the script files • Under the auto FIB category there is a TEM wizard which helps use thin membranes for TEM imaging • Image recognition: Determining the rate of deposition always goes back to the deposition curve 30KV Ga+2 – Typical damage layer- 25nm. If the X, Y stigmation is perfect then when the focus is changed the stigmation changes symmetrically. Venu Polineni I SCIF












