#winsemiconductors

[timestechnow]

WIN Semis announces new 0.12μm GaN power process

WIN Semiconductors has launched a 0.12μm GaN power process gate-length D-mode GaN HEMT technology on SiC substrates, available for high .

[electronicsbuzz]

WIN Semiconductors has announced launch of its new 0.12μm gate-length depletion-mode GaN HEMT technology, NP12-1B, built on SiC substrates